基于金-氧化锌纳米线肖特基结的电泵浦随机激光

Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction.

作者信息

Gao Fan, Morshed Muhammad M, Bashar Sunayna B, Zheng Youdou, Shi Yi, Liu Jianlin

机构信息

Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Micro-structures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.

出版信息

Nanoscale. 2015 Jun 7;7(21):9505-9. doi: 10.1039/c5nr01349f.

DOI:10.1039/c5nr01349f

PMID:25946977

Abstract

Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction diode is demonstrated. The device exhibits typical Schottky diode current-voltage characteristics with a turn-on voltage of 0.7 V. Electroluminescence characterization shows good random lasing behavior and the output power is about 67 nW at a drive current of 100 mA. Excitonic recombination is responsible for lasing generation. Zn plasma is only observed under high applied bias, which can be distinguished from the random lasing spectral features near 380 nm. The laser diode based on the Schottky junction provides an alternative approach towards semiconductor random lasers.

摘要

展示了基于金-氧化锌纳米线肖特基结二极管的电泵浦随机激光。该器件呈现出典型的肖特基二极管电流-电压特性，开启电压为0.7 V。电致发光表征显示出良好的随机激光行为，在100 mA的驱动电流下输出功率约为67 nW。激子复合是激光产生的原因。仅在高外加偏压下观察到锌等离子体，这可以与380 nm附近的随机激光光谱特征区分开来。基于肖特基结的激光二极管为半导体随机激光器提供了一种替代方法。