Serban Elena Alexandra, Åke Persson Per Ola, Poenaru Iuliana, Junaid Muhammad, Hultman Lars, Birch Jens, Hsiao Ching-Lien
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping, Sweden.
Nanotechnology. 2015 May 29;26(21):215602. doi: 10.1088/0957-4484/26/21/215602. Epub 2015 May 6.
Catalystless growth of InxAl(1-x)N core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl(1-x)N nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl(1-x)N film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl(1-x)N is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl(1-x)N[0001]//Si[111] and InxAl(1-x)N[1120]//Si[110 by removing the native SiOx layer from the substrate.
通过反应磁控溅射外延在Si(111)衬底上实现了InxAl(1 - x)N核壳纳米棒的无催化剂生长。通过扫描电子显微镜、X射线衍射、扫描透射电子显微镜和能量色散X射线光谱对样品进行了表征。发现InxAl(1 - x)N纳米棒的组成和形态受生长温度的强烈影响。在较低温度下,生长的材料形成分离良好且均匀的核壳纳米棒,其核心具有高In含量,而在较高温度下沉积会导致形成富Al的InxAl(1 - x)N薄膜,由于富Al壳层的合并,该薄膜具有低In含量的垂直畴。核心(畴)的厚度和In含量随着生长温度的降低而增加。InxAl(1 - x)N的生长追溯到初始阶段,表明核壳纳米结构的形成在非常接近界面的位置开始。建议将旋节线分解引起的相分离作为所得结构的起源。此外,通过去除衬底上的原生SiOx层,纳米棒与衬底的面内晶体学关系从纤维织构转变为外延生长,外延关系为InxAl(1 - x)N[0001]//Si[111]和InxAl(1 - x)N[1120]//Si[110]。