Li Wenjun, Brubaker Matt D, Spann Bryan T, Bertness Kris A, Fay Patrick
University of Notre Dame, Notre Dame, IN 46656 USA.
National Institute of Standards and Technology, Boulder, CO 80305 USA.
IEEE Electron Device Lett. 2018 Feb;39(2):184-187. doi: 10.1109/LED.2017.2785785. Epub 2017 Dec 21.
Wrap-around gate GaN nanowire MOSFETs using AlO as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10, an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g/SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.
使用AlO作为栅极氧化物的环绕栅GaN纳米线MOSFET已通过实验得到证明。所制造的器件表现出最小亚阈值斜率为60 mV/dec，在漏极电流的三个数量级上平均亚阈值斜率为68 mV/dec，漏极感应势垒降低为27 mV/V，导通电流为42 μA/μm（按纳米线周长归一化），开/关比超过10，本征跨导为27.8 μS/μm，对于开关效率品质因数Q = g/SS为0.41 μS/μm-dec/mV。这些性能指标使GaN纳米线MOSFET成为诸如物联网传感器和射频等新兴低功耗应用的有前途的候选者。
