Li Cong, Wang Fuzhi, Xu Jia, Yao Jianxi, Zhang Bing, Zhang Chunfeng, Xiao Min, Dai Songyuan, Li Yongfang, Tan Zhan'ao
Beijing Key Laboratory of Novel Thin Film Solar Cells, North China Electric Power University, Beijing 102206, China.
Nanoscale. 2015 Jun 7;7(21):9771-8. doi: 10.1039/c4nr06240j.
Alcohol soluble titanium chelate TIPD (titanium (diisopropoxide) bis(2,4-pentanedionate)) was used as an electron transporting layer to form an ohmic contact with the negative electrode, aiming to enhance the charge extraction and suppress the charge recombination for high performance CH3NH3PbI3/PCBM-based PHJ perovskite solar cells. The TIPD layer shows excellent suitability to CH3NH3PbI3 perovskite synthesized by different methods. For one-step synthesized CH3NH3PbI3, the power conversion efficiency (PCE) of the device with the TIPD buffer reaches 8.75%, with a nearly 33% increase in comparison with the device without the buffer layer (6.58%). For two-step synthesized CH3NH3PbI3, an open-circuit voltage (Voc) of 0.89 V, a short-circuit current density (Jsc) of 22.57 mA cm(-2), and a fill factor (FF) of 64.5%, corresponding to a PCE of 12.95% for the device with a TIPD buffer layer were achieved, which is among the best performances reported in the literature for CH3NH3PbI3/PCBM-based PHJ perovskite solar cells.
醇溶性钛螯合物TIPD(二异丙醇钛双(2,4-戊二酮))被用作电子传输层,以与负极形成欧姆接触,旨在提高电荷提取效率并抑制电荷复合,从而制备高性能的基于CH3NH3PbI3/PCBM的平面异质结(PHJ)钙钛矿太阳能电池。TIPD层对通过不同方法合成的CH3NH3PbI3钙钛矿显示出优异的适配性。对于一步法合成的CH3NH3PbI3,具有TIPD缓冲层的器件的功率转换效率(PCE)达到8.75%,与没有缓冲层的器件(6.58%)相比,提高了近33%。对于两步法合成的CH3NH3PbI3,具有TIPD缓冲层的器件实现了0.89 V的开路电压(Voc)、22.57 mA cm(-2)的短路电流密度(Jsc)和64.5%的填充因子(FF),对应的PCE为12.95%,这是基于CH3NH3PbI3/PCBM的PHJ钙钛矿太阳能电池文献报道中的最佳性能之一。