基于薄Alq阴极缓冲层的高性能平面p-i-n钙钛矿太阳能电池。
High performance planar p-i-n perovskite solar cells based on a thin Alq cathode buffer layer.
作者信息
Chen Lijia, Wang Gang, Niu Lianbin, Yao Yanqing, Guan Yunxia, Cui Yuting, Song Qunliang
机构信息
College of Physics and Electronics Engineering, Chongqing Normal University Chongqing 401331 P. R. China.
Institute for Clean Energy and Advanced Materials, Faculty of Materials and Energy, Southwest University Chongqing 400715 P. R. China
出版信息
RSC Adv. 2018 Apr 30;8(29):15961-15966. doi: 10.1039/c8ra01633j. eCollection 2018 Apr 27.
As a thin cathode buffer layer (CBL) tris-(8-hydroxyquinoline), aluminum (Alq) is successfully introduced into the planar p-i-n perovskite solar cells (PSC) between the PCBM layer and cathode with a device structure of ITO/PEDOT:PSS/CHNHPbI(Cl)/PCBM/Alq/Ag. Due to the as-introduced thin Alq CBL, a high performance planar PSC has been achieved with a fill factor (FF) of 72% and maximum power conversion efficiency (PCE) of 14.22%. The PCE value is approximately 29% higher than that of the reference device without Alq CBL. Concerning the results of AC impedance spectra and transient photocurrent measurements, such a remarkable improvement of PCE is mainly attributed to the Alq-caused better charge-extraction at the cathode, which is induced by reducing charge accumulation between PCBM and Ag.
作为一种薄的阴极缓冲层（CBL），三（8-羟基喹啉）铝（Alq）成功地被引入到平面p-i-n钙钛矿太阳能电池（PSC）中，位于PCBM层和阴极之间，器件结构为ITO/PEDOT:PSS/CHNHPbI(Cl)/PCBM/Alq/Ag。由于引入了薄的Alq CBL，实现了高性能的平面PSC，填充因子（FF）为72%，最大功率转换效率（PCE）为14.22%。该PCE值比没有Alq CBL的参考器件高出约29%。关于交流阻抗谱和瞬态光电流测量的结果，PCE的这种显著提高主要归因于Alq在阴极处引起的更好的电荷提取，这是通过减少PCBM和Ag之间的电荷积累而实现的。
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