Chen Daigao, Xiao Xi, Wang Lei, Yu Yu, Liu Wen, Yang Qi
Opt Express. 2015 May 4;23(9):11152-9. doi: 10.1364/OE.23.011152.
We propose large bandwidth and high fabrication-tolerance mode-order converters on the silicon-on-insulator platform based on novel compact tapers structures. Each of the converters is in a single waveguide. Designs of different symmetries with and without breaking the parities between odd and even modes are illustrated. The fabrication tolerances of the devices are also investigated. The simulation results show that high conversion efficiencies can be readily achieved over a wavelength range from 1520 nm to 1580 nm for all of the proposed devices. The average conversion efficiencies of TE1-to-TE0, TE2-to-TE0, TE3-to-TE0, TE2-to-TE1, TE3-to-TE1, and TE3-to-TE2 converters are -0.061 dB, -0.052 dB, -0.11 dB, -0.119 dB, -0.168 dB, and -0.154 dB, respectively. The conversion efficiencies have negligible degradations under normal width and thickness deviations.
我们基于新型紧凑锥形结构,在绝缘体上硅平台上提出了大带宽和高制造容差的模式阶次转换器。每个转换器都位于单个波导中。展示了具有和不破坏奇偶模之间奇偶性的不同对称性设计。还研究了器件的制造容差。仿真结果表明,对于所有提出的器件,在1520纳米至1580纳米的波长范围内都能轻松实现高转换效率。TE1到TE0、TE2到TE0、TE3到TE0、TE2到TE1、TE3到TE1以及TE3到TE2转换器的平均转换效率分别为-0.061分贝、-0.052分贝、-0.11分贝、-0.119分贝、-0.168分贝和-0.154分贝。在正常的宽度和厚度偏差下,转换效率的下降可以忽略不计。