基于硅基绝缘体上硅（SOI）衬底的亚波长光栅辅助模式阶数转换器。

Sub-wavelength grating assisted mode order converter on the SOI substrate.

作者信息

Cheng Zhuo, Wang Jun, Yang Zeyuan, Zhu Lina, Yang Yuanqing, Huang Yongqing, Ren Xiaomin

出版信息

Opt Express. 2019 Nov 11;27(23):34434-34441. doi: 10.1364/OE.27.034434.

DOI:10.1364/OE.27.034434

Abstract

We have designed three mode order converters using the sub-wavelength grating on the silicon-on-insulator substrate. The proposed mode order converters can separately realize the mode order conversion from the fundamental transverse electric mode to the first-order transverse electric mode (TE-to-TE), the second-order transverse electric mode (TE-to-TE) and the third-order transverse electric mode (TE-to-TE) with compact device sizes and good performances. The simulation results show that the mode order conversion efficiencies of TE-to-TE, TE-to-TE and TE-to-TE are larger than 94.4%, 95.7% and 83.7% in the wavelength ranging from 1.5 µm to 1.6 µm, the corresponding device length are 8.72 µm, 4.98 µm and 14.54 µm. In addition, the mode order converter can be fabricated with only once etching which will be advantage to the device fabrication.

摘要

我们在绝缘体上硅衬底上使用亚波长光栅设计了三种模式阶次转换器。所提出的模式阶次转换器能够以紧凑的器件尺寸和良好的性能分别实现从基模横向电模式到一阶横向电模式（TE-to-TE）、二阶横向电模式（TE-to-TE）和三阶横向电模式（TE-to-TE）的模式阶次转换。仿真结果表明，在1.5 µm至1.6 µm波长范围内，TE-to-TE、TE-to-TE和TE-to-TE的模式阶次转换效率分别大于94.4%、95.7%和83.7%，相应的器件长度分别为8.72 µm、4.98 µm和14.54 µm。此外，该模式阶次转换器仅需一次蚀刻即可制造，这将有利于器件制造。