Koo Sang-Mo, Lee Jung-Ho, Kang Min-Seok
J Nanosci Nanotechnol. 2014 Dec;14(12):8936-40. doi: 10.1166/jnn.2014.10080.
The effect of substrate temperature and thermal annealing on the structural, electrical, and optical properties of Ga-doped zinc oxide (GZO) thin films were examined for use as transparent electrodes on silicon carbide (SiC). The variation of these properties is thought to be related to the presence and stability of Ga3+ ions substituted into Zn2+ sites and adsorbed oxygen ions in GZO thin films, as well as the interfacial thickness of GZO/SiC. GZO thin film deposited at 400 degrees C without annealing has the lowest resistivity of - 1.96 x 10(-4) Ω x cm, which increased after annealing. The photosensitivity of GZO/SiC was increased with increased substrate temperature (from 1.51 to 6.87%) and after annealing (from 2.78 to 8.67%). These results were clarified by comparatively analyzing the chemical composition ratio of oxygen in the GZO thin films and the interfacial thickness between GZO/SiC.
研究了衬底温度和热退火对掺镓氧化锌（GZO）薄膜结构、电学和光学性能的影响，该薄膜用作碳化硅（SiC）上的透明电极。这些性能的变化被认为与取代Zn2+位点的Ga3+离子和GZO薄膜中吸附的氧离子的存在及稳定性有关，也与GZO/SiC的界面厚度有关。在400℃沉积且未退火的GZO薄膜具有最低电阻率-1.96×10(-4)Ω·cm，退火后电阻率升高。GZO/SiC的光敏性随衬底温度升高（从1.51%增至6.87%）以及退火后（从2.78%增至8.67%）而增加。通过比较分析GZO薄膜中氧的化学组成比以及GZO/SiC之间的界面厚度，对这些结果进行了阐释。
