Depletion effect of oxide semiconductor analyzed by Hall effects.
作者信息
Oh Teresa
出版信息
J Nanosci Nanotechnol. 2014 Dec;14(12):9047-50. doi: 10.1166/jnn.2014.10071.
PMID:25971008
Abstract
This letter discusses the tunneling behavior of amorphous indium-gallium-zinc-oxide (a-IGZO) analyzed through the observation of its Hall effects. The properties of the a-IGZO changed from those of a majority carrier to those of a minority carrier after the annealing process as a result of the electron-hole recombination due to the thermal activation energy and the formation of a depletion layer with a high-potential Schottky barrier. Therefore, the diffusion current of these minority charge carriers caused ambipolar transfer characteristics, a tunneling behavior, in the metal-oxide semiconductor (MOS) transistor.
摘要
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