Kim Jinsu, Lee Kyujoon, Takabatake Toshiro, Kim Hanchul, Kim Miyoung, Jung Myung-Hwa
Department of Physics, Sogang University, Seoul 121-742, Republic of Korea.
Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan.
Sci Rep. 2015 May 14;5:10309. doi: 10.1038/srep10309.
There are many interests to achieve long-range magnetic order in topological insulators of Bi2Se3 or Bi2Te3 by doping magnetic transition metals such as Fe and Mn. The transition metals act as not only magnetic dopants but also electric dopants because they are usually divalent. However, if the doping elements are rare-earth metals such as Gd, which are trivalent, only magnetic moments can be introduced. We fabricated single crystals of Bi2-xGdxTe3 (0 ≤ × ≤ 0.2), in which we observed magnetic phase change from paramagnetic (PM) to antiferromagnetic (AFM) phase by increasing x. This PM-to-AFM phase transition agrees with the density functional theory calculations showing a weak and short-ranged Gd-Gd AFM coupling via the intervening Te ions. The critical point corresponding to the magnetic phase transition is x = 0.09, where large linear magnetoresistance and highly anisotropic Shubnikov-de Haas oscillations are observed. These results are discussed with two-dimensional properties of topological surface state electrons.
通过掺杂诸如铁和锰等磁性过渡金属,在Bi2Se3或Bi2Te3拓扑绝缘体中实现长程磁有序存在诸多研究兴趣。过渡金属不仅充当磁性掺杂剂,还充当电掺杂剂,因为它们通常是二价的。然而,如果掺杂元素是诸如钆等三价稀土金属,则只能引入磁矩。我们制备了Bi2-xGdxTe3(0≤x≤0.2)的单晶,通过增加x,我们观察到了从顺磁(PM)到反铁磁(AFM)相的磁相变。这种从PM到AFM的相变与密度泛函理论计算结果一致,该计算表明通过中间的碲离子存在弱且短程的钆-钆反铁磁耦合。对应于磁相变的临界点是x = 0.09,在该点观察到了大的线性磁阻和高度各向异性的舒布尼科夫-德哈斯振荡。结合拓扑表面态电子的二维特性对这些结果进行了讨论。