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基于电容式微机械超声换能器(CMUT)的超分辨率超声成像的收发器设计

Transceiver Design for CMUT-Based Super-Resolution Ultrasound Imaging.

作者信息

Behnamfar Parisa, Molavi Reza, Mirabbasi Shahriar

出版信息

IEEE Trans Biomed Circuits Syst. 2016 Apr;10(2):383-93. doi: 10.1109/TBCAS.2015.2406777. Epub 2015 May 13.

DOI:10.1109/TBCAS.2015.2406777
PMID:25974944
Abstract

A recently introduced structure for the capacitive micromachined ultrasonic transducers (CMUTs) has focused on the applications of the asymmetric mode of vibration and has shown promising results in construction of super-resolution ultrasound images. This paper presents the first implementation and experimental results of a transceiver circuit to interface such CMUT structures. The multiple input/multiple output receiver in this work supports both fundamental and asymmetric modes of operation and includes transimpedance amplifiers and low-power variable-gain stages. These circuit blocks are designed considering the trade-offs between gain, input impedance, noise, linearity and power consumption. The high-voltage transmitter can generate pulse voltages up to 60 V while occupying a considerably small area. The overall circuit is designed and laid out in a 0.35 μm CMOS process and a four-channel transceiver occupies 0.86 × 0.38 mm(2). The prototype chip is characterized in both electrical and mechanical domains. Measurement results show that each receiver channel has a nominal gain of 110 dBΩ with a 3 dB bandwidth of 9 MHz while consuming 1.02 mW from a 3.3 V supply. The receiver is also highly linear, with 1 dB compression point of minimum 1.05 V which is considerably higher than the previously reported designs. The transmitter consumes 98.1 mW from a 30 V supply while generating 1.38 MHz, 30 V pulses. The CMOS-CMUT system is tested in the transmit mode and shows full functionality in air medium.

摘要

一种最近推出的用于电容式微机械超声换能器(CMUT)的结构专注于非对称振动模式的应用,并在超分辨率超声图像构建方面显示出了有前景的结果。本文介绍了一种用于连接此类CMUT结构的收发器电路的首次实现及实验结果。这项工作中的多输入/多输出接收器支持基本模式和非对称操作模式,包括跨阻放大器和低功耗可变增益级。这些电路模块的设计考虑了增益、输入阻抗、噪声、线性度和功耗之间的权衡。高压发射器可产生高达60 V的脉冲电压,同时占用相当小的面积。整个电路采用0.35μm CMOS工艺进行设计和布局,一个四通道收发器占用0.86×0.38 mm²的面积。该原型芯片在电气和机械领域均进行了表征。测量结果表明,每个接收器通道的标称增益为110 dBΩ,3 dB带宽为9 MHz,同时从3.3 V电源消耗1.02 mW的功率。该接收器也具有高度线性,其1 dB压缩点最小为1.05 V,远高于先前报道的设计。发射器从30 V电源消耗98.1 mW的功率,同时产生1.38 MHz、30 V的脉冲。该CMOS-CMUT系统在发射模式下进行了测试,并在空气介质中显示出了完整的功能。

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