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单层 PtSe₂,一种新的半导体过渡金属二卤族化合物,通过 Pt 的直接硒化外延生长。

Monolayer PtSe₂, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt.

机构信息

†Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

¶Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.

出版信息

Nano Lett. 2015 Jun 10;15(6):4013-8. doi: 10.1021/acs.nanolett.5b00964. Epub 2015 May 27.

DOI:10.1021/acs.nanolett.5b00964
PMID:25996311
Abstract

Single-layer transition-metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, spintronics, catalysis, and so on. Here, we demonstrate the epitaxial growth of high-quality single-crystal, monolayer platinum diselenide (PtSe2), a new member of the layered TMDs family, by a single step of direct selenization of a Pt(111) substrate. A combination of atomic-resolution experimental characterizations and first-principle theoretic calculations reveals the atomic structure of the monolayer PtSe2/Pt(111). Angle-resolved photoemission spectroscopy measurements confirm for the first time the semiconducting electronic structure of monolayer PtSe2 (in contrast to its semimetallic bulk counterpart). The photocatalytic activity of monolayer PtSe2 film is evaluated by a methylene-blue photodegradation experiment, demonstrating its practical application as a promising photocatalyst. Moreover, circular polarization calculations predict that monolayer PtSe2 has also potential applications in valleytronics.

摘要

单层过渡金属二卤族化合物(TMDs)因其在电子学、光电学、自旋电子学、催化等方面具有有趣的物理性质,引起了人们的广泛关注。在这里,我们通过一步直接硒化 Pt(111)衬底,展示了高质量单晶单层铂硒化物(PtSe2)的外延生长,PtSe2 是层状 TMDs 家族的新成员。原子分辨率实验表征和第一性原理理论计算的结合揭示了单层 PtSe2/Pt(111)的原子结构。角分辨光电子能谱测量首次证实了单层 PtSe2 的半导体电子结构(与金属 PtSe2 体相相反)。通过亚甲基蓝光降解实验评估了单层 PtSe2 薄膜的光催化活性,证明了其作为一种有前途的光催化剂的实际应用。此外,圆偏振计算预测单层 PtSe2 也有可能在谷电子学中得到应用。

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