†Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany.
‡Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo, Brazil.
ACS Nano. 2015 Jun 23;9(6):6271-7. doi: 10.1021/acsnano.5b01831. Epub 2015 Jun 8.
Sensor miniaturization together with broadening temperature sensing range are fundamental challenges in nanothermometry. By exploiting a large temperature-dependent screening effect observed in a resonant tunneling diode in sequence with a GaInNAs/GaAs quantum well, we present a low dimensional, wide range, and high sensitive nanothermometer. This sensor shows a large threshold voltage shift of the bistable switching of more than 4.5 V for a temperature raise from 4.5 to 295 K, with a linear voltage-temperature response of 19.2 mV K(-1), and a temperature uncertainty in the millikelvin (mK) range. Also, when we monitor the electroluminescence emission spectrum, an optical read-out control of the thermometer is provided. The combination of electrical and optical read-outs together with the sensor architecture excel the device as a thermometer with the capability of noninvasive temperature sensing, high local resolution, and sensitivity.
传感器的微型化以及拓宽温度传感范围是纳米测温学的基本挑战。通过利用共振隧穿二极管中的大温度相关屏蔽效应，与 GaInNAs/GaAs 量子阱相结合，我们提出了一种低维、宽范围、高灵敏的纳米温度计。该传感器在温度从 4.5 K 升高到 295 K 时，表现出超过 4.5 V 的双稳开关的大阈值电压偏移，线性电压-温度响应为 19.2 mV K(-1)，温度不确定度在毫开尔文 (mK) 范围内。此外，当我们监测电致发光发射光谱时，提供了对温度计的光学读出控制。电读和光读的结合以及传感器结构的优势使该器件成为一种具有非侵入式温度传感、高局部分辨率和灵敏度的温度计。
