Rothmayr Florian, Guarin Castro Edgar David, Hartmann Fabian, Knebl Georg, Schade Anne, Höfling Sven, Koeth Johannes, Pfenning Andreas, Worschech Lukas, Lopez-Richard Victor
Nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, D-97218 Gerbrunn, Germany.
Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
Nanomaterials (Basel). 2022 Mar 21;12(6):1024. doi: 10.3390/nano12061024.
Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2-4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor's electrical response and how they allow controlling the device's sensing abilities.
共振隧穿二极管光电探测器似乎是很有前景的架构，其设计简单，可用于室温下的中红外传感操作。我们制造了带有GaInAsSb吸收体的共振隧穿器件，该器件可在2-4μm范围内工作，在2004nm处对光读出具有0.97 A/W的显著电响应率。本文对光传感器的响应进行了表征，对比了不同的工作模式，并对决定传感器功能和影响其性能的主要物理因素进行了全面的理论分析。我们展示了光生载流子的漂移、积累和逃逸效率如何影响传感器电响应的静电调制，以及它们如何控制器件的传感能力。
