Mohsin Muhammad, Neumaier Daniel, Schall Daniel, Otto Martin, Matheisen Christopher, Giesecke Anna Lena, Sagade Abhay A, Kurz Heinrich
Advanced Microelectronic Center Aachen (AMICA), Applied Micro and Optoelectronic (AMO) GmbH, Otto-Blumenthalstr. 25, 52074 Aachen, Germany.
Sci Rep. 2015 Jun 10;5:10967. doi: 10.1038/srep10967.
Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.
由于石墨烯具有可调节的宽带光学特性，它被认为是一种用于光电器件的很有前景的材料。在这项工作中，我们展示了石墨烯在1530至1570纳米波长范围内的电光折射相位调制。通过将一个门控石墨烯层集成到基于硅波导的马赫-曾德尔干涉仪中，提取了相位调制器的关键参数，如有效折射率变化、插入损耗和吸收变化。这些通过实验获得的值在模拟中得到了很好的再现，并提供了设计指南，以使石墨烯器件在片上应用中与当代基于硅的相位调制器具有竞争力。
