Benediktovitch Andrei, Zhylik Alexei, Ulyanenkova Tatjana, Myronov Maksym, Ulyanenkov Alex
Department of Theoretical Physics, Belarusian State University, Nezavisimosti Avenue 4, Minsk, Belarus.
Rigaku Europe SE, Am Hardtwald 11, Ettlingen, Germany.
J Appl Crystallogr. 2015 Apr 16;48(Pt 3):655-665. doi: 10.1107/S1600576715005397. eCollection 2015 Jun 1.
Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silicon and germanium, the growth of such systems is challenged by nucleation and propagation of threading and misfit dislocations that degrade the electrical properties. To analyze the dislocation microstructure of Ge films on Si(011) and Si(111), a set of reciprocal space maps and profiles measured in noncoplanar geometry was collected. To process the data, the approach proposed by Kaganer, Köhler, Schmidbauer, Opitz & Jenichen [, (1997 ▶), , 1793-1810] has been generalized to an arbitrary surface orientation, arbitrary dislocation line direction and noncoplanar measurement scheme.
在诸如（011）或（111）等非标准表面取向的硅上生长的应变锗是用于各种半导体应用（例如互补金属氧化物半导体晶体管）的一种很有前景的材料。然而，由于硅和锗的晶格常数之间存在较大失配，此类系统的生长受到穿透位错和失配位错的成核与扩展的挑战，这些位错会降低电学性能。为了分析Ge薄膜在Si(011)和Si(111)上的位错微观结构，收集了一组在非共面几何构型中测量的倒易空间映射图和剖面图。为了处理这些数据，Kaganer、Köhler、Schmidbauer、Opitz和Jenichen [, (199�),, 1793 - 1810]提出的方法已被推广到任意表面取向、任意位错线方向和非共面测量方案。
