Ko Myung-Dong, Rim Taiuk, Kim Kihyun, Meyyappan M, Baek Chang-Ki
Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH),77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, Korea.
Department of Creative IT Engineering &Future IT Innovation Lab (POSTECH i-Lab), Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, Korea.
Sci Rep. 2015 Jul 8;5:11646. doi: 10.1038/srep11646.
Improving the efficiency of solar cells through novel materials and devices is critical to realize the full potential of solar energy to meet the growing worldwide energy demands. We present here a highly efficient radial p-n junction silicon solar cell using an asymmetric nanowire structure with a shorter bottom core diameter than at the top. A maximum short circuit current density of 27.5 mA/cm(2) and an efficiency of 7.53% were realized without anti-reflection coating. Changing the silicon nanowire (SiNW) structure from conventional symmetric to asymmetric nature improves the efficiency due to increased short circuit current density. From numerical simulation and measurement of the optical characteristics, the total reflection on the sidewalls is seen to increase the light trapping path and charge carrier generation in the radial junction of the asymmetric SiNW, yielding high external quantum efficiency and short circuit current density. The proposed asymmetric structure has great potential to effectively improve the efficiency of the SiNW solar cells.
通过新型材料和器件提高太阳能电池的效率对于充分发挥太阳能潜力以满足全球不断增长的能源需求至关重要。我们在此展示了一种高效的径向p-n结硅太阳能电池,它采用了底部核心直径比顶部短的不对称纳米线结构。在没有抗反射涂层的情况下,实现了27.5 mA/cm²的最大短路电流密度和7.53%的效率。将硅纳米线(SiNW)结构从传统的对称结构改为不对称结构,由于短路电流密度增加,从而提高了效率。通过光学特性的数值模拟和测量,发现侧壁上的全反射增加了不对称SiNW径向结中的光捕获路径和电荷载流子产生,产生了高外部量子效率和短路电流密度。所提出的不对称结构具有有效提高SiNW太阳能电池效率的巨大潜力。