基于径向 n-i-p 结构的硅纳米线的微晶硅薄膜太阳能电池在柔性不锈钢衬底上。

Radial n-i-p structure SiNW-based microcrystalline silicon thin-film solar cells on flexible stainless steel.

机构信息

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

出版信息

Nanoscale Res Lett. 2012 Nov 12;7(1):621. doi: 10.1186/1556-276X-7-621.

DOI:10.1186/1556-276X-7-621

PMID:23146105

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3503572/

Abstract

Radial n-i-p structure silicon nanowire (SiNW)-based microcrystalline silicon thin-film solar cells on stainless steel foil was fabricated by plasma-enhanced chemical vapor deposition. The SiNW solar cell displays very low optical reflectance (approximately 15% on average) over a broad range of wavelengths (400 to 1,100 nm). The initial SiNW-based microcrystalline (μc-Si:H) thin-film solar cell has an open-circuit voltage of 0.37 V, short-circuit current density of 13.36 mA/cm2, fill factor of 0.3, and conversion efficiency of 1.48%. After acid treatment, the performance of the modified SiNW-based μc-Si:H thin-film solar cell has been improved remarkably with an open-circuit voltage of 0.48 V, short-circuit current density of 13.42 mA/cm2, fill factor of 0.35, and conversion efficiency of 2.25%. The external quantum efficiency measurements show that the external quantum efficiency response of SiNW solar cells is improved greatly in the wavelength range of 630 to 900 nm compared to the corresponding planar film solar cells.

摘要

采用等离子体增强化学气相沉积法在不锈钢箔上制备了基于径向 n-i-p 结构硅纳米线（SiNW）的微晶硅薄膜太阳能电池。SiNW 太阳能电池在很宽的波长范围内（400 至 1100nm）表现出非常低的光学反射率（平均约为 15%）。初始基于 SiNW 的微晶（μc-Si:H）薄膜太阳能电池的开路电压为 0.37V，短路电流密度为 13.36mA/cm2，填充因子为 0.3，转换效率为 1.48%。经过酸处理后，改性 SiNW 基 μc-Si:H 薄膜太阳能电池的性能得到显著提高，开路电压为 0.48V，短路电流密度为 13.42mA/cm2，填充因子为 0.35，转换效率为 2.25%。外量子效率测量表明，与相应的平面薄膜太阳能电池相比，SiNW 太阳能电池在 630 至 900nm 的波长范围内的外量子效率响应得到了很大提高。