Chaudhry Aijaz Rasool, Ahmed R, Irfan Ahmad, Shaari A, Isa Ahmad Radzi Mat, Muhammad Shabbir, Al-Sehemi Abdullah G
Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310, Johor, Malaysia,
J Mol Model. 2015 Aug;21(8):199. doi: 10.1007/s00894-015-2743-9. Epub 2015 Jul 16.
The present study spotlights the designing of new derivatives of 2,7-bis (4-octylphenyl) naphtho [2,1-b:6,5-b'] difuran (C8-DPNDF) by substituting the alkyl groups (methyl, ethyl, propyl, butyl, pentyl, hexyl, and heptyl groups) at para position. Density functional theory (DFT) and time-dependent density functional theory (TD-DFT) methods are employed to optimize the molecular structures in ground and first excited states, respectively. Several electro-optical properties including hole/electron reorganization energies (λh/λe), electron affinities (EAs), ionization potentials (IPs), molecular electrostatic potentials (MEP), and frontier molecular orbitals (FMOs) have been evaluated. Furthermore their transfer integrals and intrinsic mobilities values have also been calculated. From this study, it is found that hole mobility of octyl containing derivative is raised to 4.69 cm(2) V(-1) s(-1). Moreover with attaching octyl group, hole transfer integral values have also been enhanced in newly designed derivatives. The balanced hole and electron reorganization energies, and improved transfer integrals lead to enhanced mobility in derivatives with octyl group, highlighting them as an efficient hole transfer material. Unlike the other electro-optical properties, the intrinsic hole mobility has increased because of transfer integral values of octyl containing derivative C8-DPNDF due to the dense and close crystal packing of C8-DPNDF. However, photostability of furan-based materials has not changed by increasing length of extended alkyl chain. Thus our present investigation highlights the importance of alkyl auxiliary groups that are often neglected/replaced with simple methyl group to save computation costs. Graphical Abstract The hole and electron reorganization energies of naphtho[2,1-b:6,5-b']difuran derivatives.
本研究聚焦于通过在对位取代烷基(甲基、乙基、丙基、丁基、戊基、己基和庚基)来设计2,7-双(4-辛基苯基)萘并[2,1-b:6,5-b']二呋喃(C8-DPNDF)的新衍生物。采用密度泛函理论(DFT)和含时密度泛函理论(TD-DFT)方法分别优化基态和第一激发态的分子结构。评估了包括空穴/电子重组能(λh/λe)、电子亲和势(EA)、电离势(IP)、分子静电势(MEP)和前线分子轨道(FMO)在内的几种电光性质。此外,还计算了它们的转移积分和本征迁移率值。通过本研究发现,含辛基衍生物的空穴迁移率提高到了4.69 cm² V⁻¹ s⁻¹。此外,在新设计的衍生物中,随着连接辛基,空穴转移积分值也得到了增强。平衡的空穴和电子重组能以及改善的转移积分导致含辛基衍生物的迁移率增强,使其成为一种高效的空穴传输材料。与其他电光性质不同,由于C8-DPNDF致密且紧密的晶体堆积,含辛基衍生物C8-DPNDF的转移积分值使得本征空穴迁移率增加。然而,基于呋喃的材料的光稳定性并未因延长烷基链的长度而改变。因此,我们目前的研究突出了烷基辅助基团的重要性,这些基团常常被忽视或被简单的甲基取代以节省计算成本。图形摘要 萘并[2,1-b:6,5-b']二呋喃衍生物的空穴和电子重组能。