绝缘体上锗 p-i-n 光电探测器与硅的单片集成。

Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

作者信息

Nam Ju Hyung, Afshinmanesh Farzaneh, Nam Donguk, Jung Woo Shik, Kamins Theodore I, Brongersma Mark L, Saraswat Krishna C

出版信息

Opt Express. 2015 Jun 15;23(12):15816-23. doi: 10.1364/OE.23.015816.

DOI:10.1364/OE.23.015816

PMID:26193560

Abstract

A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

摘要

展示了一种单片集成在硅（Si）衬底上的绝缘体上锗（GOI）p-i-n光电探测器。GOI是通过在硅（Si）上的二氧化硅（SiO₂）中蚀刻窗口，使锗在二氧化硅（SiO₂）上进行横向过生长（LAT-OVG）形成的。该光电探测器具有出色的二极管特性，具有高开关比（6×10⁴）、低暗电流和平坦的反向电流-电压（I-V）特性。由于在沉积后冷却过程中锗外延生长期间产生的残余双轴拉伸应变，观察到在高达1550 nm处光吸收增强。这种采用单片集成的真正与硅兼容的锗光电探测器为基于GOI的高性能硅平台光子器件带来了新机遇。