Huang Yun, Deng Hui-Xiong, Xu Kai, Wang Zhen-Xing, Wang Qi-Sheng, Wang Feng-Mei, Wang Feng, Zhan Xue-Ying, Li Shu-Shen, Luo Jun-Wei, He Jun
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, 100190, Beijing, P. R. China.
Nanoscale. 2015 Sep 7;7(33):14093-9. doi: 10.1039/c5nr04174k. Epub 2015 Aug 5.
A facile and fruitful CVD method is reported for the first time, to synthesize high-quality hexagonal SnS2 nanosheets on carbon cloth via in situ sulfurization of SnO2. Moreover, highly sensitive phototransistors based on SnS2 with an on/off ratio surpassing 10(6) under ambient conditions and a rising time as short as 22 ms under vacuum are fabricated, which are superior than most phototransistors based on LMDs. Electrical transport measurements at varied temperatures together with theoretical calculations verify that sulfur vacancies generated by the growth process would induce a defect level near the bottom of the conduction band, which significantly affects the performance of the SnS2 device. These findings may open up a new pathway for the synthesis of LMDs, shed light on the effects of defects on devices and expand the building blocks for high performance optoelectronic devices.
首次报道了一种简便且有效的化学气相沉积（CVD）方法，通过对SnO₂进行原位硫化，在碳布上合成高质量的六方相SnS₂纳米片。此外，制备了基于SnS₂的高灵敏度光电晶体管，其在环境条件下的开/关比超过10⁶，在真空条件下的上升时间短至22毫秒，优于大多数基于层状材料（LMDs）的光电晶体管。在不同温度下的电输运测量以及理论计算证实，生长过程中产生的硫空位会在导带底部附近诱导出一个缺陷能级，这显著影响了SnS₂器件的性能。这些发现可能为层状材料的合成开辟一条新途径，阐明缺陷对器件的影响，并扩展高性能光电器件的构建模块。
