Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, PR China.
Nanoscale. 2017 Jul 6;9(26):9167-9174. doi: 10.1039/c7nr03646a.
The development trend of modern electronics and optoelectronics is towards continuous high integration and miniaturization. Using vertical configurations with three-dimensional geometry, it is easy to establish a higher integration density than the traditional planar one, and thus, this technology shows great promise for designing the next-generation electronics/optoelectronic devices. Two-dimensional (2D) layered metal dichalcogenides (2D-LMDs) are important building blocks for electronic/optoelectronic devices, where they are usually grown in parallel to the substrates during chemical vapor deposition (CVD), and consequently they are solely exploited to fabricate lateral structure devices with planar geometry. In this research, for the first time the vertical growth of free standing 2D layered nanosheets of hexagonal tin disulfide (SnS) on a flat substrate was realized using a modified CVD method. Furthermore, it was successfully demonstrated, at the first attempt, that a type of non-planar vertical photodetector could be fabricated using free standing SnS nanosheets and this detector showed promise for photodetection applications. This work prepares the way for the growth of monodisperse vertical 2D-LMD nanosheets on flat substrates, and expands their use from conventional lateral structure devices to non-planar vertical electronic/optoelectronic devices.
现代电子学和光电子学的发展趋势是不断向高集成和小型化发展。采用具有三维几何形状的垂直结构，很容易建立比传统平面结构更高的集成密度，因此，这项技术在设计下一代电子/光电子器件方面具有很大的潜力。二维（2D）层状金属二卤化物（2D-LMDs）是电子/光电子器件的重要构建块，它们通常在化学气相沉积（CVD）过程中与衬底平行生长，因此仅被用于制造具有平面几何形状的横向结构器件。在这项研究中，首次使用改进的 CVD 方法实现了在平坦衬底上自由站立的二维层状六方硫化锡（SnS）纳米片的垂直生长。此外，首次成功地证明了可以使用自由站立的 SnS 纳米片制造出一种非平面垂直光电探测器，并且该探测器在光电探测应用方面显示出了应用前景。这项工作为在平坦衬底上生长单分散垂直 2D-LMD 纳米片铺平了道路，并将它们的用途从传统的横向结构器件扩展到非平面垂直电子/光电子器件。
