Large-area growth of SnS nanosheets by chemical vapor deposition for high-performance photodetectors.

Two-dimensional tin disulfide (SnS) is very popular in electronic, optoelectronic, energy storage, and conversion applications. However, the uncontrollable large-area growth of SnS nanosheets and unsatisfactory performance of the photodetectors based on SnS have hindered its applications. Here, we propose a chemical vapor deposition (CVD) method using SnCl as a precursor to grow SnS nanosheets. We found that the as-grown SnS nanosheets were high-quality crystal structures. Then, photodetectors based on the as-grown SnS were fabricated and, exhibited a high responsivity (1400 A W), fast response rate (a response time of 7 ms and a recovery time of 6 ms), perfect external quantum efficiency (EQE) (2.6 × 10%), and remarkable detectivity (*) (3.1 × 10 Jones). Our work provides a new CVD method to grow high-quality SnS nanosheets.