Chen Ying, Zhang Man
Hubei Engineering Technology Research Center of Energy Photoelectric Device and System, Hubei University of Technology Wuhan 430068 China
School of Science, Hubei University of Technology Wuhan 430068 China.
RSC Adv. 2021 Sep 7;11(48):29960-29964. doi: 10.1039/d1ra05779k. eCollection 2021 Sep 6.
Two-dimensional tin disulfide (SnS) is very popular in electronic, optoelectronic, energy storage, and conversion applications. However, the uncontrollable large-area growth of SnS nanosheets and unsatisfactory performance of the photodetectors based on SnS have hindered its applications. Here, we propose a chemical vapor deposition (CVD) method using SnCl as a precursor to grow SnS nanosheets. We found that the as-grown SnS nanosheets were high-quality crystal structures. Then, photodetectors based on the as-grown SnS were fabricated and, exhibited a high responsivity (1400 A W), fast response rate (a response time of 7 ms and a recovery time of 6 ms), perfect external quantum efficiency (EQE) (2.6 × 10%), and remarkable detectivity (*) (3.1 × 10 Jones). Our work provides a new CVD method to grow high-quality SnS nanosheets.
二维二硫化锡（SnS）在电子、光电子、能量存储和转换应用中非常受欢迎。然而，SnS纳米片的大面积生长不可控以及基于SnS的光电探测器性能不尽人意，阻碍了其应用。在此，我们提出一种以SnCl为前驱体的化学气相沉积（CVD）方法来生长SnS纳米片。我们发现所生长的SnS纳米片具有高质量的晶体结构。然后，基于所生长的SnS制造了光电探测器，其表现出高响应度（1400 A/W）、快速响应速率（响应时间为7 ms，恢复时间为6 ms）、完美的外量子效率（EQE）（2.6×10%）以及显著的探测率（3.1×10 Jones）。我们的工作提供了一种生长高质量SnS纳米片的新CVD方法。
