University of Muenster , MEET Battery Research Center, Institute of Physical Chemistry, Corrensstrasse 46, 48149 Muenster, Germany.
ACS Appl Mater Interfaces. 2015 Sep 16;7(36):20124-33. doi: 10.1021/acsami.5b05382. Epub 2015 Sep 2.
Mg-Si thin films with various elemental compositions ranging from 0≤x≤1 in MgxSi(1-x) were obtained via combinatorial magnetron sputter deposition of Si and Mg in order to improve the electrochemical lithiation/delithiation process of pure Si by embedding Si in an active Mg-Si matrix. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman spectroscopy methods were used to investigate the morphology, stoichiometry, and structure of the different thin film samples. Constant current charge/discharge cycling revealed significant electrochemical changes depending on the Mg content in comparison to the pure Si active material improving the capacity retention to 96% over 400 cycles.
采用 Si 和 Mg 共溅射的组合磁控溅射方法,制备了 MgxSi(1-x)(0≤x≤1)组成的 Mg-Si 薄膜,旨在通过将 Si 嵌入活性 Mg-Si 基体中来改善纯 Si 的电化学嵌锂/脱锂过程。使用扫描电子显微镜、能谱、X 射线衍射和拉曼光谱方法研究了不同薄膜样品的形貌、化学计量和结构。恒流充放电循环显示,与纯 Si 活性材料相比,不同 Mg 含量的电化学变化显著,在 400 次循环中容量保持率提高到 96%。