基于MgZnO的金属-半导体-金属紫外光电探测器上的纳米网电极

Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors.

作者信息

Lee Ching-Ting, Lin Heng-Yu, Tseng Chun-Yen

机构信息

Institute of Microelectronics, Department of Electrical Engineering, Research Center of Energy Technology and Strategy, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, Republic of China.

出版信息

Sci Rep. 2015 Sep 1;5:13705. doi: 10.1038/srep13705.

DOI:10.1038/srep13705

PMID:26324247

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5490653/

Abstract

In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 10(10) cmHz(0.5)W(-1) to 2480 and 2.43 × 10(10) cmHz(0.5)W(-1), respectively.

摘要

在这项工作中，通过高度有序的聚苯乙烯纳米球掩膜倾斜沉积金属来制备纳米级网格电极。此外，使用蒸汽冷却冷凝系统沉积本征MgZnO薄膜作为金属-半导体-金属紫外光电探测器（MSM-UV-PD）的吸收层。金属占据器件表面区域约10%的100纳米线宽纳米网格电极使得PD在紫外（UV）波长范围内具有高透射率。当用纳米网格电极代替薄金属电极时，基于MgZnO的MSM-UV-PD在330纳米波长、5伏工作偏置电压下评估的光响应度从0.135提升至0.248 A/W，相应的量子效率从50.75%提高到93.23%。最后，采用纳米网格电极还有助于分别将紫外-可见抑制比（R330nm/R450nm）和探测率从1663和1.78×10(10) cmHz(0.5)W(-1)提高到2480和2.43×10(10) cmHz(0.5)W(-1)。