Zhang Meng, Hu Youdi, Wang Shuaiqi, Li Yaru, Wang Chunwu, Meng Ke, Chen Gang
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China.
Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, P. R. China.
Nanoscale. 2021 Oct 21;13(40):17147-17155. doi: 10.1039/d1nr05975k.
Self-driven photodetectors are essential for many applications where it is unpractical to provide or replace power sources. Here, we report a new device architecture for self-driven photodetectors with tunable asymmetric Schottky junctions based on a nanomesh electrode. The vertical-channel nanomesh scaffold is composed of a hexagonally ordered nanoelectrode array fabricated the nanosphere lithography technique. The top and bottom nanoelectrodes are separated by only 30 nm and the areal ratio of the two nanoelectrodes can be fine-tuned, which effectively modifies the geometric asymmetricity of the Schottky junctions in the photodetector devices. The self-driven photodetectors are fabricated by depositing the (FAPbI)(MAPbBr) (MA = methylammonium, FA = formamidinium) perovskite films onto the nanomesh electrodes. Under the self-driven mode, the optimized device demonstrates a high detectivity of 1.05 × 10 Jones and a large on/off ratio of 2.1 × 10. This nanomesh electrode is very versatile and can be employed to investigate the optoelectronic properties of various semiconducting materials.
自驱动光电探测器对于许多无法提供或更换电源的应用至关重要。在此，我们报道了一种基于纳米网电极的具有可调谐非对称肖特基结的自驱动光电探测器的新器件架构。垂直通道纳米网支架由通过纳米球光刻技术制造的六边形有序纳米电极阵列组成。顶部和底部纳米电极仅相隔30 nm，并且两个纳米电极的面积比可以微调，这有效地改变了光电探测器器件中肖特基结的几何不对称性。自驱动光电探测器是通过将(FAPbI)(MAPbBr)（MA = 甲铵，FA = 甲脒）钙钛矿薄膜沉积到纳米网电极上制成的。在自驱动模式下，优化后的器件表现出1.05×10琼斯的高探测率和2.1×10的大开关比。这种纳米网电极非常通用，可用于研究各种半导体材料的光电特性。
