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通过热退火处理增强扭曲多层二硫化钼中的层间粘附力。

Enhancing the interlayer adhesive force in twisted multilayer MoS₂ by thermal annealing treatment.

作者信息

Jin Ke, Liu Dameng, Tian Yu

机构信息

State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, People's Republic of China.

出版信息

Nanotechnology. 2015 Oct 9;26(40):405708. doi: 10.1088/0957-4484/26/40/405708. Epub 2015 Sep 17.

Abstract

Few-layer MoS2 has recently gained great attention owing to its remarkable mechanical and photoelectric properties, which are strongly influenced by the interactions and relative orientations between layers. Here, we report on Raman scattering measurements of twisted MoS2 flakes prepared by exfoliation and nondestructive transfer. Thermal annealing treatment can effectively enhance the interlayer coupling of twisted MoS2 and lead to a van der Waals (vdW) interaction between two stacked layers. We have roughly calculated the interlayer coupling force by a diatomic chain model (DCM) and found that the interlayer adhesive force increased by ∼20% compared with no-treatment samples. We additionally found that the non-Bernal stacking structure of MoS2 induces a weakening in the interlayer coupling. This study could promote the development of novel semiconductors, optoelectronic devices, and superlubricity materials.

摘要

由于其卓越的机械和光电性能,少层二硫化钼(MoS2)最近受到了极大的关注,这些性能受到层间相互作用和相对取向的强烈影响。在此,我们报告了通过剥离和无损转移制备的扭曲MoS2薄片的拉曼散射测量结果。热退火处理可以有效地增强扭曲MoS2的层间耦合,并导致两个堆叠层之间的范德华(vdW)相互作用。我们通过双原子链模型(DCM)粗略计算了层间耦合力,发现与未处理的样品相比,层间粘附力增加了约20%。我们还发现,MoS2的非伯纳尔堆叠结构会导致层间耦合减弱。这项研究可以促进新型半导体、光电器件和超润滑材料的发展。

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