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通过插入铜在镍铁/二硫化钼中实现大的可调谐自旋到电荷转换

Large Tunable Spin-to-Charge Conversion in NiFe/Molybdenum Disulfide by Cu Insertion.

作者信息

Su Shu Hsuan, Huang Tzu Tai, Pan Bi-Rong, Lee Jung-Chuan, Qiu Yi Jie, Chuang Pei-Yu, Gultom Pangihutan, Cheng Cheng-Maw, Chen Yi-Chun, Huang Jung-Chung Andrew

机构信息

Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.

Sheng Chuang Technology Company, Taichung 407330, Taiwan.

出版信息

ACS Appl Mater Interfaces. 2024 Apr 26;16(18):24122-31. doi: 10.1021/acsami.4c03360.

DOI:10.1021/acsami.4c03360
PMID:38670928
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11082844/
Abstract

Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of NiFe (Py) and molybdenum disulfide (MoS). This phenomenon can be characterized by the inverse Edelstein effect length (λ), which is enhanced with decreasing MoS thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS surface from exchange interactions with Py. Furthermore, the Cu-MoS interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.

摘要

在磁性材料与过渡金属二硫属化物的界面处进行的自旋到电荷的转换,在开发用于自旋电子学应用的快速且超低功耗器件的研究工作中引起了极大的兴趣。在此,我们报告了在室温下对由镍铁(Py)和二硫化钼(MoS)的界面产生的自旋到电荷转换的观测结果。这种现象可以通过逆埃德尔斯坦效应长度(λ)来表征,该长度随着MoS厚度的减小而增大,这表明自旋轨道耦合(SOC)在MoS中起主导作用。通过在Py和MoS之间插入一个铜中间层,可以显著改善自旋到电荷的转换,这表明铜中间层可以防止来自Py层的磁近邻效应,并保护MoS表面的SOC免受与Py的交换相互作用的影响。此外,铜 - MoS界面可以增强自旋电流并改善电子传输。我们的结果表明,定制磁性异质结构的界面为开发自旋电子器件以实现更高的自旋到电荷转换效率提供了一种替代策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/efbec4e8e8db/am4c03360_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/ca8b803e82d9/am4c03360_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/14f9b70d8c24/am4c03360_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/d4389b6fc671/am4c03360_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/efbec4e8e8db/am4c03360_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/ca8b803e82d9/am4c03360_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/14f9b70d8c24/am4c03360_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/d4389b6fc671/am4c03360_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0e10/11082844/efbec4e8e8db/am4c03360_0004.jpg

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本文引用的文献

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