Ahn Heejin, Um Youngho
J Nanosci Nanotechnol. 2015 Mar;15(3):2342-5. doi: 10.1166/jnn.2015.10252.
We investigated the structural, morphological, and electrical properties of cuprous oxide (Cu2O) film dependency on substrate type. Thin films grown using RF magnetron sputtering were characterized by scanning electron microscopy, X-ray diffraction (XRD), and Hall effect measurements. Cu2O thin films were deposited onto sapphire (0001), Si (100), and MgO (110) substrates, and showed Cu2O single phase only, which was confirmed by XRD measurement. Relatively larger compressive strain existed in Cu2O film grown on sapphire and Si, while a smaller tensile strain appeared in Cu2O film grown on MgO. Cu2O thin film crystallite sizes showed a linear dependence on strain. Moreover, film carrier concentration and mobility increased with increasing strain, while resistivity decreased with decreasing strain. Cu2O film strain due to induced strain opens the possibility of controlling structural and electrical properties in device applications.
我们研究了氧化亚铜（Cu2O）薄膜的结构、形态和电学性质对衬底类型的依赖性。使用射频磁控溅射生长的薄膜通过扫描电子显微镜、X射线衍射（XRD）和霍尔效应测量进行表征。将Cu2O薄膜沉积在蓝宝石（0001）、硅（100）和氧化镁（110）衬底上，XRD测量证实其仅呈现Cu2O单相。生长在蓝宝石和硅上的Cu2O薄膜中存在相对较大的压缩应变，而生长在氧化镁上的Cu2O薄膜中出现较小的拉伸应变。Cu2O薄膜微晶尺寸与应变呈线性关系。此外，薄膜载流子浓度和迁移率随应变增加而增加，而电阻率随应变减小而降低。由诱导应变引起的Cu2O薄膜应变为在器件应用中控制结构和电学性质提供了可能性。
