Abed Chayma, Fernández Susana, Aouida Selma, Elhouichet Habib, Priego Fernando, Castro Yolanda, Gómez-Mancebo M B, Munuera Carmen
Department of Physics, University of Tunis El Manar, 2092 Tunis, Tunisia.
Energy Department, CIEMAT, 28040 Madrid, Spain.
Materials (Basel). 2020 May 6;13(9):2146. doi: 10.3390/ma13092146.
In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:AlO (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10 Ω cm was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.
在本研究中，基于ZnO:MgO:AlO（10:2 wt%）材料，通过射频（RF）磁控溅射从传统固态靶材制备了高透明薄膜。这些薄膜在玻璃和硅衬底上沉积，工作压力分别为0.21、0.61、0.83和1 Pa，温度为300°C，功率为250 W。利用X射线衍射图谱（XRD）、原子力显微镜（AFM）、紫外-可见吸收光谱和霍尔效应测量来评估薄膜的结构、光学、形态和电学性质随工作压力的变化。系统研究了薄膜的光学性质，如折射率、消光系数和带隙能量。通过计算吸收系数估算了薄膜的光学带隙。该参数范围为3.921至3.655 eV，几乎不受工作压力的影响。另一方面，在最低工作压力0.21 Pa下沉积的样品实现了最低电阻率8.8×10Ω·cm。该薄膜表现出最佳的光电性能。所有这些数据表明，制备的薄层在光伏应用中具有良好的应用潜力。
