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通过在Cu2ZnSnS4/Mo界面使用薄碳中间层来提高Cu2ZnSnS4太阳能电池的J(sc) 。

Improvement of J(sc) in a Cu2ZnSnS4 Solar Cell by Using a Thin Carbon Intermediate Layer at the Cu2ZnSnS4/Mo Interface.

作者信息

Zhou Fangzhou, Zeng Fangqin, Liu Xu, Liu Fangyang, Song Ning, Yan Chang, Pu Aobo, Park Jongsung, Sun Kaiwen, Hao Xiaojing

机构信息

School of Photovoltaic and Renewable Energy Engineering, University of New South Wales , Sydney, New South Wales 2052, Australia.

School of Metallurgy and Environment, Central South University , Changsha, Hunan 410083, China.

出版信息

ACS Appl Mater Interfaces. 2015 Oct 21;7(41):22868-73. doi: 10.1021/acsami.5b05652. Epub 2015 Oct 7.

DOI:10.1021/acsami.5b05652
PMID:26418196
Abstract

Back contact modification plays an important role in improving energy conversion efficiency of Cu2ZnSnS4 (CZTS) thin film solar cells. In this paper, an ultrathin carbon layer is introduced on molybdenum (Mo)-coated soda lime glass (SLG) prior to the deposition of CZTS precursor to improve the back contact and therefore enhance CZTS solar cell efficiency. By introducing this layer, the short circuit current (Jsc) and device conversion efficiency increase for both nonvacuum (sol-gel) and vacuum (sputtering) methods. Specifically, for the sol-gel based process, Jsc increases from 13.60 to 16.96 mA/cm(2) and efficiency from 4.47% to 5.52%, while for the sputtering based process, Jsc increases from 17.50 to 20.50 mA/cm(2) and efficiency from 4.10% to 5.20%. Furthermore, introduction of this layer does not lead to any deterioration of either open circuit voltage (Voc) or fill factor (FF).

摘要

背接触修饰在提高Cu2ZnSnS4(CZTS)薄膜太阳能电池的能量转换效率方面起着重要作用。在本文中,在沉积CZTS前驱体之前,先在涂有钼(Mo)的钠钙玻璃(SLG)上引入超薄碳层,以改善背接触,从而提高CZTS太阳能电池的效率。通过引入这一层,非真空(溶胶-凝胶)和真空(溅射)方法的短路电流(Jsc)和器件转换效率均有所提高。具体而言,对于基于溶胶-凝胶的工艺,Jsc从13.60增加到16.96 mA/cm²,效率从4.47%提高到5.52%;而对于基于溅射的工艺,Jsc从17.50增加到20.50 mA/cm²,效率从4.10%提高到5.20%。此外,引入这一层不会导致开路电压(Voc)或填充因子(FF)的任何恶化。

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