Institute of Electronics Microelectronics and Nanotechnology, IEMN-CNRS UMR 8520 , Avenue Poincaré CS60069, 59652 Villeneuve d'Ascq France.
Faculty of Physics, Warsaw University of Technology , Koszykowa 75, 00-662 Warsaw, Poland.
Nano Lett. 2015 Oct 14;15(10):6349-56. doi: 10.1021/acs.nanolett.5b01338. Epub 2015 Oct 4.
We demonstrate the relation between the optical blinking of colloidal semiconductor nanocrystals (NCs) and their electrical charge blinking for which we provide the first experimental observation of power-law statistics. To show this, we harness the performance of CdSe/ZnS NCs coupled with carbon nanotube field-effect transistors (CNTFETs), which act as single charge-sensitive electrometers with submillisecond time resolution, at room temperature. A random telegraph signal (RTS) associated with the NC single-trap charging is observed and exhibits power-law temporal statistics (τ(-α), with α in the range of ∼1-3), and a Lorentzian current noise power spectrum with a well-defined 1/f(2) corner. The spectroscopic analysis of the NC-CNTFET devices is consistent with the charging of NC defect states with a charging energy of Ec ≥ 200 meV. These results pave the way for a deeper understanding of the physics and technology of nanocrystal-based optoelectronic devices.
我们展示了胶体半导体纳米晶体(NCs)的光学闪烁与其电荷闪烁之间的关系,为此我们首次观察到了幂律统计。为了证明这一点,我们利用 CdSe/ZnS NCs 与碳纳米管场效应晶体管(CNTFET)相结合的性能,这些 NCs 与 CNTFET 结合,在室温下充当具有亚毫秒时间分辨率的单个电荷敏感静电计。观察到与 NC 单陷阱充电相关的随机电报信号(RTS),并表现出幂律时间统计(τ(-α),其中 α 在 ∼1-3 的范围内),以及具有明确定义的 1/f(2) 角的洛伦兹电流噪声功率谱。对 NC-CNTFET 器件的光谱分析与具有 200meV 以上的充电能 Ec 的 NC 缺陷态的充电一致。这些结果为深入了解基于纳米晶体的光电设备的物理和技术铺平了道路。