Univ. Grenoble Alpes , F-38000 Grenoble, France.
CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group , F-38000 Grenoble, France.
Nano Lett. 2015 Oct 14;15(10):6794-801. doi: 10.1021/acs.nanolett.5b02634. Epub 2015 Oct 6.
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a carrier concentration from 10(17) to 10(20) cm(-3). Field effect transistor (FET) measurements combined with finite element simulation by NextNano(3) software have put in evidence the high mobility of carriers in the nonintentionally doped (NID) NWs.
随着对 GaN 基器件的兴趣日益增加，对掺杂的控制和评估变得越来越重要。我们研究了一系列通过分子束外延（MBE）生长的 Si 掺杂 GaN 纳米线（NWs）的结构和电学性质，其典型尺寸为 2-3μm 长，20-200nm 半径。特别是，高分辨率能量色散 X 射线光谱（EDX）表明，NWs 中的 Si 掺入量高于二维（2D）层中的 Si 掺入量，并且在 NW 的边缘存在 Si 偏析，其掺杂量最高。此外，对单个 NW 的直接传输测量表明，掺杂可通过电阻率从 10(2) 到 10(-3) Ω·cm 和载流子浓度从 10(17) 到 10(20) cm(-3) 进行控制。场效应晶体管（FET）测量结合 NextNano(3) 软件的有限元模拟表明，非故意掺杂（NID）NWs 中的载流子迁移率很高。
