Korolczuk Mieczyslaw, Ochab Mateusz, Rutyna Iwona
Faculty of Chemistry, Maria Curie Sklodowska University, 20-031 Lublin, Poland.
Faculty of Chemistry, Maria Curie Sklodowska University, 20-031 Lublin, Poland.
Talanta. 2015 Nov 1;144:517-21. doi: 10.1016/j.talanta.2015.06.084. Epub 2015 Jul 2.
The double deposition and stripping steps were proposed to minimize interference and increase the sensitivity in anodic stripping voltammetry of As(III). Two working electrodes of drastically different surface areas were used for the measurements. Arsenic was first deposited at the gold film electrode of a large surface area. When the deposition step at this electrode finished, the electrode was moved at a short distance to the second electrode consisting of four gold microelectrodes. The arsenic stripped from the first electrode was partially deposited at the microelectrodes and the analytical signal was obtained by its oxidation. Due to double deposition of arsenic the interference of Cu(II) was minimized and the detection limit of As(III) was lowered by one order of magnitude. The calibration graph was linear from 5×10(-10) to 1×10(-8) mol L(-1) following deposition time of 300 s at the first and the second electrode.
提出双沉积和溶出步骤以最小化干扰并提高砷(III)阳极溶出伏安法的灵敏度。使用两个表面积差异极大的工作电极进行测量。砷首先沉积在大表面积的金膜电极上。当该电极的沉积步骤完成后,将电极短距离移动至由四个金微电极组成的第二个电极。从第一个电极溶出的砷部分沉积在微电极上,并通过其氧化获得分析信号。由于砷的双沉积,铜(II)的干扰最小化,砷(III)的检测限降低了一个数量级。在第一个和第二个电极上沉积300 s后,校准曲线在5×10(-10)至1×10(-8)mol L(-1)范围内呈线性。