Hsieh D H, Tzou A J, Kao T S, Lai F I, Lin D W, Lin B C, Lu T C, Lai W C, Chen C H, Kuo H C
Opt Express. 2015 Oct 19;23(21):27145-51. doi: 10.1364/OE.23.027145.
In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.
在本报告中，通过用AlGaN/GaN多量子势垒（MQB）电子阻挡层（EBL）取代传统垂直腔面发射激光器（VCSEL）结构中的体AlGaN电子阻挡层，展示了基于III族氮化物的垂直腔面发射激光器（VCSEL）激光性能的提升。输出功率可从0.3 mW提高到0.9 mW，提高了两倍。此外，与使用体AlGaN EBL相比，采用MQB-EBL制造的器件的阈值电流密度从12 kA/cm²（9.5 mA）降低到10.6 kA/cm²（8.5 mA）。理论计算结果表明，通过使用MQB结构，应变的部分释放和量子干涉效应可使载流子注入效率提高，从而增加导带的有效势垒高度。
