Zhang Yang, Liu Yu, Xue Xiao-Lan, Zeng Xiao-Lin, Wu Jing, Shi Li-Wei, Chen Yong-Hai
School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China.
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China.
Sensors (Basel). 2022 Jan 5;22(1):399. doi: 10.3390/s22010399.
Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.
在p型掺杂的块状砷化镓中观察到的圆偏振光电流，在室温下随外加偏置电压呈非线性变化。已经探究出这种现象源于砷化镓中电流诱导的自旋极化。此外，我们发现沿（001）方向生长的p型掺杂块状砷化镓的电流诱导自旋极化方向位于样品平面内且与外加电场垂直，这与砷化镓量子阱中的情况相同。该研究表明，圆偏振光电流是一种在室温下研究电流诱导自旋极化的新光学方法。
