Dubrovskii Vladimir G
ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia.
ACS Omega. 2019 May 13;4(5):8400-8405. doi: 10.1021/acsomega.9b00525. eCollection 2019 May 31.
We present a new model for the length and radius evolution of catalyst-free III-V nanowires grown by selective area epitaxy. We consider simultaneous axial and radial growth of nanowires, which is more typical for this technique compared to the vapor-liquid-solid growth of nanowires. Analytic expressions for the time evolution of the nanowire length and radius are derived, showing the following properties. As long as the nanowire length is shorter than the collection length of group III atoms on the sidewalls, the length evolves superlinearly and the radius evolves linearly with time. For longer nanowires, both the length and radius increase sublinearly with time. The scaling growth laws are controlled by a single parameter that depends on group V flux. The model fits well the data on the selective area growth of InAs and GaAs nanowires by different techniques. Overall, these results can be used for controlling the catalyst-free growth of III-V nanowires and their morphology, including ternary III-V material systems.
我们提出了一种新模型，用于描述通过选择性区域外延生长的无催化剂III-V族纳米线的长度和半径演变。我们考虑纳米线的轴向和径向同时生长，与纳米线的气-液-固生长相比，这对于该技术而言更为典型。推导了纳米线长度和半径随时间演变的解析表达式，呈现出以下特性。只要纳米线长度短于侧壁上III族原子的收集长度，长度就会超线性演变，而半径则随时间线性演变。对于更长的纳米线，长度和半径均随时间亚线性增加。标度生长规律由一个取决于V族通量的单一参数控制。该模型很好地拟合了通过不同技术进行的InAs和GaAs纳米线选择性区域生长的数据。总体而言，这些结果可用于控制无催化剂的III-V族纳米线生长及其形态，包括三元III-V族材料体系。
