Dubrovskii Vladimir G
Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia.
Nanomaterials (Basel). 2022 Oct 21;12(20):3698. doi: 10.3390/nano12203698.
A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets on the mask, is established, taking into account the minimum chemical potential of the III-V pairs required for nucleation on different surfaces, and the surface diffusion of the group III adatoms. The SAG maps are plotted in terms of the material fluxes versus the temperature. The non-trivial behavior of the SAG window, with the opening size and pitch, is analyzed, depending on the direction of the diffusion flux of the group III adatoms into or from the openings. A good correlation of the model with the data on the SAG of vertical GaN NWs and planar GaAs and InAs NWs by molecular beam epitaxy (MBE) is demonstrated.
建立了一种用于在具有规则开口阵列的掩膜衬底上进行选择性区域生长（SAG）时垂直或平面III-V族纳米线（NWs）成核的模型。考虑到在不同表面上成核所需的III-V族对的最小化学势以及III族吸附原子的表面扩散，确定了最佳SAG区域，该区域中NWs在开口内成核，并且掩膜上不存在寄生III-V族微晶或III族液滴。根据材料通量与温度绘制了SAG图。根据III族吸附原子向开口内或从开口扩散通量的方向，分析了SAG窗口随开口尺寸和间距的非平凡行为。证明了该模型与通过分子束外延（MBE）生长垂直GaN NWs以及平面GaAs和InAs NWs的SAG数据具有良好的相关性。
