Vinod M, Raghavan G, Sivasubramanian V
Materials Science Group Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, Tamil Nadu, India.
Homi Bhabha National Institute, Mumbai, India.
Sci Rep. 2018 Dec 7;8(1):17706. doi: 10.1038/s41598-018-35866-7.
Impulsive photo-excitation of solids results in a travelling strain pulse which manifests itself as coherent acoustic phonon oscillations. These oscillations have been extensively studied using time-resolved pump-probe spectroscopy. In the present work, we report the generation of extremely long-lived, coherent longitudinal acoustic phonon oscillations in intrinsic GaAs (100), with clear and unambiguous evidence of Fano interference between these oscillations and the continuum of electronic states close to the bandgap. Fano resonance is a widespread phenomenon observed in atomic systems and condensed media that arises from quantum interference between a continuum of quantum states and a discrete quantum state. Among other techniques, Fano resonance has been investigated with respect to optical phonons studied with Raman Spectroscopy. In the present work, we investigate Fano resonance in coherent phonon oscillations generated without the aid of any capping layer, dopants or substrate/interface effects. Since Fano resonance is sensitive to changes in electronic structure, doping and defects, these observations are important to the field of picosecond ultrasonics which is used for non-destructive depth profiling of solids and for carrier diffusion studies.
固体的脉冲光激发会产生一个传播的应变脉冲,该脉冲表现为相干声子振荡。这些振荡已通过时间分辨泵浦-探测光谱进行了广泛研究。在本工作中,我们报告了在本征GaAs(100)中产生的极其长寿命的相干纵向声子振荡,并有明确无误的证据表明这些振荡与接近带隙的电子态连续体之间存在法诺干涉。法诺共振是在原子系统和凝聚介质中观察到的一种普遍现象,它源于量子态连续体与离散量子态之间的量子干涉。在其他技术中,已经通过拉曼光谱研究的光学声子对法诺共振进行了研究。在本工作中,我们研究了在不借助任何覆盖层、掺杂剂或衬底/界面效应的情况下产生的相干声子振荡中的法诺共振。由于法诺共振对电子结构、掺杂和缺陷的变化敏感,这些观察结果对于用于固体无损深度剖析和载流子扩散研究的皮秒超声领域具有重要意义。