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定向自组装中缺陷消除的分子途径。

Molecular pathways for defect annihilation in directed self-assembly.

作者信息

Hur Su-Mi, Thapar Vikram, Ramírez-Hernández Abelardo, Khaira Gurdaman, Segal-Peretz Tamar, Rincon-Delgadillo Paulina A, Li Weihua, Müller Marcus, Nealey Paul F, de Pablo Juan J

机构信息

Materials Science Division, Argonne National Laboratory, Lemont, IL 60439; Institute for Molecular Engineering, The University of Chicago, Chicago, IL 60637; School of Polymer Science and Engineering, Chonnam National University, Gwangju 500757, Korea;

School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, NY 14853;

出版信息

Proc Natl Acad Sci U S A. 2015 Nov 17;112(46):14144-9. doi: 10.1073/pnas.1508225112. Epub 2015 Oct 29.

Abstract

Over the last few years, the directed self-assembly of block copolymers by surface patterns has transitioned from academic curiosity to viable contender for commercial fabrication of next-generation nanocircuits by lithography. Recently, it has become apparent that kinetics, and not only thermodynamics, plays a key role for the ability of a polymeric material to self-assemble into a perfect, defect-free ordered state. Perfection, in this context, implies not more than one defect, with characteristic dimensions on the order of 5 nm, over a sample area as large as 100 cm(2). In this work, we identify the key pathways and the corresponding free energy barriers for eliminating defects, and we demonstrate that an extraordinarily large thermodynamic driving force is not necessarily sufficient for their removal. By adopting a concerted computational and experimental approach, we explain the molecular origins of these barriers and how they depend on material characteristics, and we propose strategies designed to overcome them. The validity of our conclusions for industrially relevant patterning processes is established by relying on instruments and assembly lines that are only available at state-of-the-art fabrication facilities, and, through this confluence of fundamental and applied research, we are able to discern the evolution of morphology at the smallest relevant length scales-a handful of nanometers-and present a view of defect annihilation in directed self-assembly at an unprecedented level of detail.

摘要

在过去几年中,通过表面图案对嵌段共聚物进行定向自组装已从学术上的好奇转变为通过光刻技术商业化制造下一代纳米电路的可行竞争者。最近,很明显动力学而非仅仅是热力学,对于聚合材料自组装成完美、无缺陷有序状态的能力起着关键作用。在此背景下,完美意味着在面积达100平方厘米的样品区域上,缺陷不超过一个,其特征尺寸约为5纳米。在这项工作中,我们确定了消除缺陷的关键途径和相应的自由能垒,并证明了异常大的热力学驱动力不一定足以消除这些缺陷。通过采用计算与实验相结合的方法,我们解释了这些能垒的分子起源以及它们如何依赖于材料特性,并提出了旨在克服这些能垒的策略。我们通过依赖只有在最先进的制造设施中才有的仪器和装配线,确立了我们关于工业相关图案化工艺结论的有效性,并且,通过这种基础研究与应用研究的融合,我们能够在最小的相关长度尺度——几纳米——上辨别形态的演变,并以前所未有的详细程度呈现定向自组装中缺陷消除的情况。

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