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全反铁磁绝缘体中的巡游金属域壁。

Mobile metallic domain walls in an all-in-all-out magnetic insulator.

机构信息

Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA. Department of Applied Physics, Stanford University, Stanford, CA, USA.

Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA.

出版信息

Science. 2015 Oct 30;350(6260):538-41. doi: 10.1126/science.aac8289.

DOI:10.1126/science.aac8289
PMID:26516280
Abstract

Magnetic domain walls are boundaries between regions with different configurations of the same magnetic order. In a magnetic insulator, where the magnetic order is tied to its bulk insulating property, it has been postulated that electrical properties are drastically different along the domain walls, where the order is inevitably disturbed. Here we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7, that has an unusual all-in-all-out magnetic order, via transport and spatially resolved microwave impedance microscopy. The domain walls have a virtually temperature-independent sheet resistance of ~1 kilohm per square, show smooth morphology with no preferred orientation, are free from pinning by disorders, and have strong thermal and magnetic field responses that agree with expectations for all-in-all-out magnetic order.

摘要

磁畴壁是同一磁序的不同组态区域之间的边界。在磁性绝缘体中,磁序与其体绝缘性质相关联,人们假设在畴壁处的电性质会有很大的不同,因为那里的磁序不可避免地会受到干扰。在这里,我们通过传输和空间分辨微波阻抗显微镜报告了在具有不寻常的全内全出磁序的磁性绝缘体 Nd2Ir2O7 中发现的高导电性磁畴壁。畴壁的面电阻几乎与温度无关,约为 1 千欧姆/平方,具有无择优取向的平滑形态,不受无序的钉扎,并且具有强烈的热和磁场响应,这与全内全出磁序的预期一致。

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