CRISMAT, UMR 6508, CNRS-ENSICAEN, Normandie Université , 6 Blvd Maréchal Juin, 14000 Caen Cedex, France.
Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems , Königsbrücker Strasse 178, 01099 Dresden, Germany.
ACS Appl Mater Interfaces. 2015 Nov 25;7(46):25679-84. doi: 10.1021/acsami.5b06485. Epub 2015 Nov 11.
Capacitors with a dielectric material consisting of amorphous laminates of Al2O3 and TiO2 with subnanometer individual layer thicknesses can show strongly enhanced capacitance densities compared to the bulk or laminates with nanometer layer thickness. In this study, the structural and dielectric properties of such subnanometer laminates grown on silicon by state-of-the-art atomic layer deposition are investigated with varying electrode materials. The laminates show a dielectric constant reaching 95 combined with a dielectric loss (tan δ) of about 0.2. The differences of the observed dielectric properties in capacitors with varying electrodes indicate that chemical effects at the interface with the TiN electrode play a major role, while the influence of the local roughness of the individual layers is rather limited.
具有由亚纳米级厚度的 Al2O3 和 TiO2 非晶层压材料组成的电介质的电容器与体材料或具有纳米级厚度的层压材料相比，可以显示出大大增强的电容密度。在这项研究中，通过最先进的原子层沉积在硅上生长的这种亚纳米层压材料的结构和介电性能随不同的电极材料而变化。这些层压材料表现出达到 95 的介电常数，同时介电损耗（tan δ）约为 0.2。具有不同电极的电容器中观察到的介电性能的差异表明，与 TiN 电极的界面处的化学效应起着主要作用，而各层的局部粗糙度的影响则相当有限。
