Xiong Li, Hu Jin, Yang Zhao, Li Xianglin, Zhang Hang, Zhang Guanhua
State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China.
Guangdong Fenghua Advanced Technology Holding Co., Ltd., Zhaoqing 526060, China.
Molecules. 2022 Jun 20;27(12):3951. doi: 10.3390/molecules27123951.
This study presents the construction and dielectric properties investigation of atomic-layer-deposition AlO/TiO/HfO dielectric-film-based metal-insulator-metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm AlO-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10 A·cm, and quadratic voltage coefficient of 303.6 ppm·V. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm and 0.25 fF·µm. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole-Frenkel emission and charge-trapping effect of the high- materials. All these results indicate potential applications in integrated passive devices.
本研究介绍了基于原子层沉积AlO/TiO/HfO介电薄膜的金属-绝缘体-金属（MIM）电容器的构建及其介电性能研究。还系统地研究了介电层材料和厚度对MIM电容器性能的影响。通过原子力显微镜（AFM）分析了不同材料和厚度的介电薄膜的形貌和表面粗糙度。其中，基于25 nm AlO的介电电容器表现出优异的综合电学性能，包括7.89 fF·µm的高电容密度、约12 V的理想击穿电压和1.4×10 A·cm的漏电流，以及303.6 ppm·V的二次电压系数。同时，所制备的电容器在频率和偏置电压（1 MHz）方面表现出理想的稳定性，相应的电容密度变化约为0.52 fF·µm和0.25 fF·µm。此外，电容密度和漏电流变化的机制可能归因于高材料的普尔-弗伦克尔发射和电荷俘获效应。所有这些结果表明其在集成无源器件中的潜在应用。
