Wang W Y, Tang Y L, Zhu Y L, Suriyaprakash J, Xu Y B, Liu Y, Gao B, Cheong S-W, Ma X L
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China.
Rutgers Center for Emergent Materials and Department of Physics &Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
Sci Rep. 2015 Nov 3;5:16097. doi: 10.1038/srep16097.
Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a < 111 > . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.
掺杂的BaSnO₃作为未来应用中一种有前景的透明导电氧化物，近年来引起了广泛关注。了解其微观结构特征对于相关器件的开发至关重要。在本文中，我们使用传统和像差校正透射电子显微镜研究了0.001% La掺杂的BaSnO₃薄膜的微观结构特征。对比分析表明，薄膜中存在高密度的Ruddlesden-Popper缺陷，这些缺陷位于{100}平面上，平移位移为1/2a <111>。原子电子能量损失谱（EELS）元素映射显示，Ruddlesden-Popper缺陷以Ba-O层终止，并且还展示了Ruddlesden-Popper缺陷处具有不同元素分布的两种扭折结构。对Ruddlesden-Popper缺陷的晶格畸变进行定量分析表明，局部晶格间距大幅增加了36%，这表明薄膜中Ruddlesden-Popper缺陷周围存在大应变。
