Prado Mariana C, Nascimento Regiane, Faria Barbara E N, Matos Matheus J S, Chacham Helio, Neves Bernardo R A
Nanotechnology. 2015 Nov 27;26(47):475702. doi: 10.1088/0957-4484/26/47/475702. Epub 2015 Nov 4.
In this paper, we address the challenge of identifying grain boundaries on the molybdenum disulphide (MoS2) surface at the nanometre scale using a simple self-assembled monolayer (SAM) decoration method. Combined with atomic force microscopy, octadecylphosphonic acid monolayers readily reveal grain boundaries in MoS2 at ambient conditions, without the need of atomic resolution measurements under vacuum. Additional ab initio calculations allow us to obtain the preferred orientation of the SAM structure relative to the MoS2 beneath, and therefore, together with the experiments, the MoS2 crystalline orientations at the grain boundaries. The proposed method enables the visualization of grain boundaries with sub-micrometer resolution for nanodevice investigation and failure analysis.
在本文中，我们应对了一项挑战，即使用一种简单的自组装单分子层（SAM）修饰方法在纳米尺度上识别二硫化钼（MoS2）表面的晶界。结合原子力显微镜，十八烷基膦酸单分子层在环境条件下能够轻松揭示MoS2中的晶界，而无需在真空下进行原子分辨率测量。额外的从头算计算使我们能够获得SAM结构相对于下方MoS2的优选取向，因此，结合实验，我们能够确定晶界处MoS2的晶体取向。所提出的方法能够以亚微米分辨率可视化晶界，用于纳米器件研究和失效分析。
