1] Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, USA [2] Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440 746, South Korea.
Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, USA.
Nat Commun. 2015 Jan 28;6:6128. doi: 10.1038/ncomms7128.
Monolayer transition metal dichalcogenides are materials with an atomic structure complementary to graphene but diverse properties, including direct energy bandgaps, which makes them intriguing candidates for optoelectronic devices. Various approaches have been demonstrated for the growth of molybdenum disulphide (MoS2) on insulating substrates, but to date, growth of isolated crystalline flakes has been demonstrated at random locations only. Here we use patterned seeds of molybdenum source material to grow flakes of MoS2 at predetermined locations with micrometre-scale resolution. MoS2 flakes are predominantly monolayers with high material quality, as confirmed by atomic force microscopy, transmission electron microscopy and Raman and photoluminescence spectroscopy. As the monolayer flakes are isolated at predetermined locations, transistor fabrication requires only a single lithographic step. Device measurements exhibit carrier mobility and on/off ratio that exceed 10 cm(2) V(-1) s(-1) and 10(6), respectively. The technique provides a path for in-depth physical analysis of monolayer MoS2 and fabrication of MoS2-based integrated circuits.
单层过渡金属二硫化物是一种原子结构与石墨烯互补但性质不同的材料，包括直接能隙，这使得它们成为光电设备的有趣候选材料。已经证明了多种在绝缘衬底上生长二硫化钼 (MoS2) 的方法，但迄今为止，仅在随机位置证明了孤立的结晶薄片的生长。在这里，我们使用钼源材料的图案化种子在预定位置以具有微米级分辨率生长 MoS2 薄片。原子力显微镜、透射电子显微镜以及拉曼和光致发光光谱证实，MoS2 薄片主要是具有高材料质量的单层。由于单层薄片在预定位置被隔离，因此晶体管制造仅需要单个光刻步骤。器件测量显示载流子迁移率和开关比分别超过 10 cm(2) V(-1) s(-1) 和 10(6)。该技术为深入分析单层 MoS2 以及制造基于 MoS2 的集成电路提供了一条途径。
