Cheng Chih-Hsien, Lin Yung-Hsiang, Chen Ting-Hui, Chen Hsiang-Yu, Chi Yu-Chieh, Lee Chao-Kuei, Wu Chih-I, Lin Gong-Ru
Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU), No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan R.O.C.
Sci Rep. 2015 Nov 12;5:16463. doi: 10.1038/srep16463.
The study presents a novel demonstration of a passively mode-locked erbium-doped fiber laser (EDFL) that is based on a silicon carbide (SixC1-x) saturable absorber. When the C/Si composition ratio is increased to 1.83, the SixC1-x film transforms from two-photon absorption to nonlinear saturable absorption, and the corresponding value reaches -3.9 × 10(-6) cm/W. The Si-rich SixC1-x film cannot mode lock the EDFL because it induced high intracavity loss through two-photon absorption. Even when a stoichiometric SiC is used, the EDFL is mode locked, similar to an EDFL operating under weak nonlinear-polarization-rotation condition. A C-rich SixC1-x film containing sp(2)-orbital C-C bonds with a linear absorbance of 0.172 and nonlinear absorbance of 0.04 at a 181 MW/cm(2) saturation intensity demonstrates nonlinear transmittance. The C-rich SixC1-x saturable absorber successfully generates a short mode-locked EDFL pulse of 470 fs. The fluctuation of the pulse-train envelope dropps considerably from 11.6% to 0.8% when a strong saturable-absorption-induced self-amplitude modulation process occurs in the C-rich SixC1-x film.
该研究展示了一种基于碳化硅(SixC1-x)饱和吸收体的被动锁模掺铒光纤激光器(EDFL)的新颖演示。当C/Si组成比增加到1.83时,SixC1-x薄膜从双光子吸收转变为非线性饱和吸收,其相应值达到-3.9×10^(-6) cm/W。富含硅的SixC1-x薄膜无法锁模EDFL,因为它通过双光子吸收导致腔内损耗过高。即使使用化学计量比的SiC,EDFL也能锁模,类似于在弱非线性偏振旋转条件下运行的EDFL。一种富含C的SixC1-x薄膜,含有sp(2)轨道的C-C键,在181 MW/cm²的饱和强度下线性吸光度为0.172,非线性吸光度为0.04,表现出非线性透过率。富含C的SixC1-x饱和吸收体成功产生了470 fs的短锁模EDFL脉冲。当富含C的SixC1-x薄膜中发生强饱和吸收诱导的自振幅调制过程时,脉冲序列包络的波动从11.6%大幅下降到0.8%。