Slotman G J, van Wijk M M, Zhao Pei-Liang, Fasolino A, Katsnelson M I, Yuan Shengjun
Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands.
Department of Applied Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747AG Groningen, The Netherlands.
Phys Rev Lett. 2015 Oct 30;115(18):186801. doi: 10.1103/PhysRevLett.115.186801. Epub 2015 Oct 26.
We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.
我们对具有实际莫尔条纹图案的石墨烯在六方氮化硼上的电子、光学和输运性质进行了计算。后者是通过使用全原子模型进行结构弛豫产生的。结果表明，这种弛豫对于电子性质至关重要。我们描述了实验观察到的特征，例如额外的狄拉克点以及磁场中能级的“霍夫施塔特蝴蝶”结构。我们发现电子结构对局部能隙的多体重整化很敏感。
