Neupane Hari Krishna, Adhikari Narayan Prasad
Amrit Campus, Institute of Science and Technology, Tribhuvan University, Kathmandu, Nepal.
Central Department of Physics, Institute of Science and Technology, Tribhuvan University, Kathmandu, Nepal.
J Mol Model. 2022 Mar 30;28(4):107. doi: 10.1007/s00894-022-05101-2.
Heterostructures (HS), vacancy defects in HS, and molecular adsorption on defected HS of 2D materials are fervently inspected for a profusion of applications because of their aptness to form stacked layers that confer approach to an amalgamation of favorable electronic and magnetic properties. In this context, graphene (Gr), hexagonal boron nitride (h-BN), HS of graphene/h-BN (Gr/h-BN), and molecular adsorption on Gr/h-BN offer promising prospects for electronic, spintonic, and optoelectronic devices. In this study, we investigated the structural, electronic, and magnetic properties of C sites vacancy defects in Gr/h-BN HS and adsorption of water molecule on defected Gr/h-BN HS materials by using first-principles calculations based on spin-polarized density functional theory method within van der Waals (vdW) corrections DFT-D2 approach. We found that these considered materials are stable 2D vdW HS. Based on band structure calculations, they are semimetallic, and on density of states and partial density of states analysis, they are magnetic materials. The magnetic moment developed in these defected systems is due to the unpaired up-spin and down-spin states in the orbitals of atoms present in the materials created by the vacancy defects.
由于二维材料的异质结构(HS)、HS中的空位缺陷以及缺陷HS上的分子吸附易于形成堆叠层,从而能够实现有利的电子和磁性特性的融合,因此被热切地研究用于大量应用。在这种背景下,石墨烯(Gr)、六方氮化硼(h-BN)、石墨烯/h-BN(Gr/h-BN)的异质结构以及Gr/h-BN上的分子吸附为电子、自旋电子和光电器件提供了广阔的前景。在本研究中,我们基于自旋极化密度泛函理论方法,采用范德华(vdW)校正DFT-D2方法进行第一性原理计算,研究了Gr/h-BN HS中C位空位缺陷的结构、电子和磁性特性以及水分子在缺陷Gr/h-BN HS材料上的吸附。我们发现这些所考虑的材料是稳定的二维vdW HS。基于能带结构计算,它们是半金属,并且通过态密度和分波态密度分析,它们是磁性材料。这些缺陷系统中产生的磁矩是由于空位缺陷在材料中原子轨道中产生的未配对的自旋向上和自旋向下状态。