Li Lei, Sun Yanmei, Ai Chunpeng, Lu Junguo, Wen Dianzhong, Bai Xuduo
HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China.
School of Chemistry and Materials Science, Heilongjiang University, Harbin, 150080, China.
Nanoscale Res Lett. 2015 Dec;10(1):442. doi: 10.1186/s11671-015-1148-0. Epub 2015 Nov 16.
An undoped organic small-molecule 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) and a kind of nanocomposite blending poly(methyl methacrylate) (PMMA) into PBD are employed to implement bistable resistive switching. For the bistable resistive switching indium tin oxide (ITO)/PBD/Al, its ON/OFF current ratio can touch 6. What is more, the ON/OFF current ratio, approaching to 10(4), is available due to the storage layer PBD:PMMA with the chemical composition 1:1 in the bistable resistive switching ITO/PBD:PMMA/Al. The capacity, data retention of more than 1 year and endurance performance (>10(4) cycles) of ITO/PBD:PMMA(1:1)/Al, exhibits better stability and reliability of the samples, which underpins the technique and application of organic nonvolatile memory.
采用未掺杂的有机小分子2-(4-叔丁基苯基)-5-(4-联苯基)-1,3,4-恶二唑(PBD)以及一种将聚甲基丙烯酸甲酯(PMMA)混入PBD的纳米复合材料来实现双稳态电阻开关。对于双稳态电阻开关氧化铟锡(ITO)/PBD/Al,其开/关电流比可达6。此外,在双稳态电阻开关ITO/PBD:PMMA/Al中,由于化学组成为1:1的存储层PBD:PMMA,开/关电流比可达10⁴左右。ITO/PBD:PMMA(1:1)/Al的电容、超过1年的数据保持能力以及耐久性(>10⁴次循环),表明样品具有更好的稳定性和可靠性,这为有机非易失性存储器的技术和应用提供了支持。